semiconductor group 1 may-30-1996 bss 169 preliminary data sipmos ? small-signal transistor ? n channel ? depletion mode ? high dynamic resistance pin 1 pin 2 pin 3 g s d type v ds i d r ds(on) package ordering code bss 169 100 v 0.12 a 12 w sot-23 Q67050-T7 maximum ratings parameter symbol values unit drain source voltage v ds 100 v drain-gate voltage r gs = 20 k w v dgr 100 gate source voltage v gs 14 gate-source peak voltage, aperiodic v gs 20 continuous drain current t a = 25 c i d 0.12 a dc drain current, pulsed t a = 25 c i dpuls 0.36 power dissipation t a = 25 c p tot 0.36 w chip or operating temperature t j -55 ... + 150 c storage temperature t stg -55 ... + 150 thermal resistance, chip to ambient air r thja 350 k/w therminal resistance, chip-substrate - reverse side 1) r thjsr 285 din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56 1) for package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm.
semiconductor group 2 may-30-1996 bss 169 preliminary data electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs = -10 v, i d = 250 a v (br)dsv 100 - - v gate threshold voltage v ds = 3 v, i d = 10 a v gs(th) -3 -2.5 -1.5 drain-source cutoff current v ds = 100 v, v gs = -10 v, t j = 25 c v ds = 100 v, v gs = -10 v, t j = 125 c i dsv - - - - - 1 a on-state drain current v gs = 0 v, v ds = 10 v i d(on) 70 200 - ma gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na drain-source on-resistance v gs = 0 v, i d = 0.05 a r ds(on) - 6 12 w
semiconductor group 3 may-30-1996 bss 169 preliminary data electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = 0.12 a g fs 0.1 0.15 - s input capacitance v gs = -4.5 v, v ds = 25 v, f = 1 mhz c iss - 70 100 pf output capacitance v gs = -4.5 v, v ds = 25 v, f = 1 mhz c oss - 11 20 reverse transfer capacitance v gs = -4.5 v, v ds = 25 v, f = 1 mhz c rss - 4 7 turn-on delay time v dd = 30 v, v gs = -5... + 5 v, i d = 0.27 a r gs = 50 w t d(on) - 7 11 ns rise time v dd = 30 v, v gs = -5... + 5 v, i d = 0.27 a r gs = 50 w t r - 10 15 turn-off delay time v dd = 30 v, v gs = -5... + 5 v, i d = 0.27 a r gs = 50 w t d(off) - 13 17 fall time v dd = 30 v, v gs = -5... + 5 v, i d = 0.27 a r gs = 50 w t f - 13 17
semiconductor group 4 may-30-1996 bss 169 preliminary data electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t a = 25 c i s - - 0.12 a inverse diode direct current,pulsed t a = 25 c i sm - - 0.36 inverse diode forward voltage v gs = 0 v, i f = 0.3 a v sd - 0.8 1.3 v
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